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Title: Thermal stability and the nonstoichiometry region of doped CdCr/sub 2/Se/sub 4/ and CdIn/sub 2/S/sub 4/

Journal Article · · Inorg. Mater. (Engl. Transl.); (United States)
OSTI ID:7033983

This work studies the thermal stability of dichromium cadmium tetraselenide, doped with different impurities, and of diindium cadium tetrasulfide, as well as the region of nonstoichiometry of their single crystals grown by chemical vapor-transport reactions. The authors used the thermogravimetric method for investigations which were carried out with a MOM derivatograph in the temperature range 300-1170/sup 0/K. The nature of impurities and the doping level were found to have influence on the temperature of the beginning of oxidation. It is shown that CdIn/sub 2/S/sub 4/ is more resistant to oxidation than CdCr/sub 2/Se/sub 4/.

Research Organization:
Institute of Applied Physics, Academy of Sciences of the Moldavian SSR
OSTI ID:
7033983
Journal Information:
Inorg. Mater. (Engl. Transl.); (United States), Vol. 22:3
Country of Publication:
United States
Language:
English

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