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Nonstoichiometry and physical properties of the ferromagnetic semiconductor CdCr/sub 2/Se/sub 4/

Journal Article · · Inorg. Mater. (Engl. Transl.); (United States)
OSTI ID:5951965
This work is concerned with the effect of nonstoichiometry on the properties of the magnetic semiconductor cadmium dichromium tetraselenide. The electric and magnetic properties of samples with composition at the boundary of the region of homogeneity of CdCr/sub 2/Se/sub 4/ were measured. It was shown that within region of homogeneity the physical characteristics of cadmium dichromium tetraselenide differ significantly. Both p and n type conductivity are observed. A deficit of selenium and cadmium and an excess of chromium reduce the total resistance of the samples by two orders of magnitude and the magnitude of the thermo-emf decreases by a factor of ten. The magnetic parameters are also different; the ferromagnetic Curie temperature, the paramagnetic Curie-Weiss temperature, and the effective magnetic moment. Based on the values of the unit-cell parameter and pycnometric density of the samples with different nonstoichiometry it was concluded that the dominant type of defects in CdCr/sub 2/Se/sub 4/ are vacancies in the anionic or cationic sublattices, depending on the composition.
OSTI ID:
5951965
Journal Information:
Inorg. Mater. (Engl. Transl.); (United States), Journal Name: Inorg. Mater. (Engl. Transl.); (United States) Vol. 24:7; ISSN INOMA
Country of Publication:
United States
Language:
English

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