Lateral optical confinement of channeled-substrate-planar lasers with GaAs/AlGaAs substrates
Journal Article
·
· IEEE J. Quant. Electron.; (United States)
A physical explanation is presented of the lateral guiding mechanism in channeled-substrate-planar (CSP) lasers based on the amount of wavefront tilt of the transverse field outside the channel region. Because of this inherent wavefront tilt, all CSP lasers will have a very slight asymmetry in their transverse far-field pattern. The nature of the guiding mechanism does not require light absorption by the substrate. Design curves showing the complex lateral effective index step as a function of n-clad thickness with the active layer as a parameter are also presented. Depending on the specific layer compositions and thicknesses, the CSP guiding mechanism can provide a positive lateral index step for substrates with mole fractions of AIAs ranging from 0 to higher than 0.2.
- Research Organization:
- David Sarnoff Research Center, Princeton, NJ (US)
- OSTI ID:
- 7030003
- Journal Information:
- IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. 24:5; ISSN IEJQA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360603 -- Materials-- Properties
42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALLOYS
ALUMINIUM ALLOYS
ARSENIC COMPOUNDS
ARSENIDES
CONFINEMENT
DESIGN
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASER CAVITIES
LASER GUIDANCE
LASERS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SUBSTRATES
360603 -- Materials-- Properties
42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALLOYS
ALUMINIUM ALLOYS
ARSENIC COMPOUNDS
ARSENIDES
CONFINEMENT
DESIGN
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASER CAVITIES
LASER GUIDANCE
LASERS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SUBSTRATES