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Observations and consequences of nonuniform aluminum concentrations in the channel regions of AlGaAs channeled-substrate-planar lasers

Journal Article · · IEEE J. Quant. Electron.; (United States)
Compositional changes in the n-clad layer within the channel region of channel substrate planar (CSP) type semiconductor lasers have been observed. As a consequence, a large optical cavity (LOC) or an enhanced substrate loss (ESL) version of the CSP geometry may result, both of which may have significantly different characteristics from those of a conventional CSP laser. The CSP-LOC generally has a larger near-field spot size, while the ESL-CSP is characterized by an off axis, asymmetric far-field pattern.
Research Organization:
David Sarnoff Research Center, Princeton, NJ 08543
OSTI ID:
5733480
Journal Information:
IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. QE-23:11; ISSN IEJQA
Country of Publication:
United States
Language:
English