Radiation-hardened microelectronics for accelerators
Conference
·
· IEEE Trans. Nucl. Sci.; (United States)
OSTI ID:7029397
Ionization and displacement phenomena in semiconducting materials are reviewed. How these basic effects lead to changes in the electrical characteristics of transistors and diodes and the functionality of integrated circuits are summarized. The fundamental radiation limits for various semiconductor technologies are summarized. Recommendations and precautions are given regarding the applicability of various microelectronic technologies to different accelerator environments.
- Research Organization:
- Div. 400 and 2154 Respectively, P.O. Box 5800, Sandia National Labs., Albuquerque, NM (US)
- OSTI ID:
- 7029397
- Report Number(s):
- CONF-871006-
- Conference Information:
- Journal Name: IEEE Trans. Nucl. Sci.; (United States) Journal Volume: 35:1
- Country of Publication:
- United States
- Language:
- English
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420800 -- Engineering-- Electronic Circuits & Devices-- (-1989)
43 PARTICLE ACCELERATORS
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420800 -- Engineering-- Electronic Circuits & Devices-- (-1989)
43 PARTICLE ACCELERATORS
430100* -- Particle Accelerators-- Design
Development
& Operation
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SEMICONDUCTOR DEVICES
TRANSISTORS