Radiation effects on microelectronics
Conference
·
OSTI ID:4438289
From international society for hybrid microelectronics symposium; San Francisco, California, USA (22 Oct 1973). The major effects of a nuclear radiation environment on microelectronics are reviewed, with emphasis on semiconductor devices and other raddation sensitive components. The neutron, ionization dose and transient radiation effects have been explored for a variety of typical devices. The radiation failure modes are identified for most classes of semiconductor circuit elements, and hardening techniques are reviewed. Estimates are made of current and ultimate hardness levels of semiconductor devices. (auth)
- Research Organization:
- Sandia Labs., Albuquerque, N.Mex. (USA)
- NSA Number:
- NSA-29-000489
- OSTI ID:
- 4438289
- Report Number(s):
- SLA--73-5731; CONF-731024--1
- Country of Publication:
- Country unknown/Code not available
- Language:
- English
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