Radiation effects on microelectronics in space

Journal Article · Mon Oct 31 23:00:00 EST 1988 · Proc. IEEE; (United States)

DOI:https://doi.org/10.1109/5.90114· OSTI ID:6256645

Srour, J R; McGarrity, J M

The basic mechanisms of space radiation effects on microelectronics are reviewed in this paper. Topics discussed include the effects of displacement damage and ionizing radiation on devices and circuits, single event phenomena, dose enhancement, radiation effects on optoelectronic devices and passive components, hardening approaches, and simulation of the space radiation environment. A summary is presented of damage mechanisms that can cause temporary or permanent failure of devices and circuits operating in space.

• Research Organization: Northrop Research and Technology Center, Palos Verdes Peninsula, CA (US); U.S. Army Lab. Command, Harry Diamond Labs., Adelphi, MD (US)
• OSTI ID: 6256645
• Journal Information: Proc. IEEE; (United States), Journal Name: Proc. IEEE; (United States) Vol. 76:11; ISSN IEEPA
• Country of Publication: United States
• Language: English

Related Subjects

440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
654001 -- Radiation & Shielding Physics-- Radiation Physics
Shielding Calculations & Experiments
73 NUCLEAR PHYSICS AND RADIATION PHYSICS
DOCUMENT TYPES
ELECTRONIC CIRCUITS
ENVIRONMENT
FAILURES
HARDENING
IONIZING RADIATIONS
MICROELECTRONIC CIRCUITS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION HARDENING
RADIATION TRANSPORT
RADIATIONS
REVIEWS
SEMICONDUCTOR DEVICES
SPACE VEHICLE COMPONENTS