SEU measurements on HFETS and HFET SRAMS

Conference · Thu Nov 30 23:00:00 EST 1989 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA)

OSTI ID:7029228

Remke, R L; Witmer, S B; Jones, S D.F. ^[1]; Barber, F E ^[2]; Flesner, L D; O'Brien, M E ^[3]

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1. AT and T Bell Lab, Reading PA (US)
2. AT and T Bell Lab, Allentown, PA (US)
3. Naval Ocean Systems Center, San Diego, CA (US)

The single event upset (SEU) response of n{sup +}-AlGaAs/GaAs heterostructure field effect transistors(HFETs--also known as SDHTs, HEMTs, MODFETs, and TEGFETs) and HFET static random access memories (SRAMs) was evaluated by measuring their response to focused electron pulses. Initially, focused electron beam pulses were used to measure and model HFET drain and gate SEU responses. Circuit simulations using these SEU models predicted that an HFET memory is most vulnerable to a single particle event in the area between the drain and the source (drain hit) of the OFF pull down HFET. Subsequent testing of an HFET SRAM cell confirmed this prediction. The authors discuss how these first SEU evaluations of HFETs and HFET memories show that measurements on individual HFETs and circuit simulations of SEU hits may be used to predict the SEU response of HFET memories.

• OSTI ID: 7029228
• Report Number(s): CONF-890723--
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA) Vol. 36:6; ISSN 0018-9499; ISSN IETNA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605 -- Materials-- Radiation Effects
42 ENGINEERING
426000 -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
640301 -- Atomic
Molecular & Chemical Physics-- Beams & their Reactions
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
CALCULATION METHODS
DESIGN
ELECTRON BEAMS
ELECTRONIC CIRCUITS
FIELD EFFECT TRANSISTORS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HARDENING
HETEROJUNCTIONS
INTEGRATED CIRCUITS
INTERACTIONS
JUNCTIONS
LEPTON BEAMS
MATERIALS
MATHEMATICAL MODELS
MEMORY DEVICES
MICROELECTRONIC CIRCUITS
N-TYPE CONDUCTORS
PARTICLE BEAMS
PARTICLE MODELS
PERFORMANCE TESTING
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
RADIATION HARDENING
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR MATERIALS
SIMULATION
SINGLE-PARTICLE MODEL
TESTING
TRANSISTORS