Pulsed ion beam surface analysis as a means of [ital in] [ital situ] real-time analysis of thin films during growth

Journal Article · Fri Jul 01 04:00:00 EDT 1994 · Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (United States)

DOI:https://doi.org/10.1116/1.578987· OSTI ID:7025164

Krauss, A R ^[1]; Lin, Y ^[2]; Auciello, O ^[3]; Lamich, G J; Gruen, D M ^[1]; Schultz, J A ^[4]; Chang, R P.H. ^[5]

---

1. Materials Science and Chemistry Divisions, Argonne National Laboratory, Argonne, Illinois 60439 (United States)
2. Materials Science and Chemistry Divisions, Argonne National Laboratory, Argonne, Illinois 60439 (United States) Materials Science Department, Northwestern University, Evanston, Illinois 60208 (United States)
3. MCNC Microelectronics Center of North Carolina, Research Triangle Park, North Carolina 27709 (United States)
4. Ionwerks, Houston, Texas 71310 (United States)
5. Materials Science Department, Northwestern University, Evanston, Illinois 60208 (United States)

Low-energy (5--15 keV) pulsed ion beam surface analysis comprises several different surface spectroscopies which possess the ability to provide a remarkably wide range of information directly relevant to the growth of single and multicomponent semiconductor, metal and metal-oxide thin films and layered structures. Ion beam methods have not however, been widely used as an [ital in] [ital situ] monitor of thin film growth because existing commercial instrumentation causes excessive film damage, physically conflicts with the deposition equipment, and requires a chamber pressure [similar to]10[sup [minus]7]--10[sup [minus]8] Torr, i.e., much lower than that associated with most deposition processes ([ge]10[sup [minus]4] Torr). We have developed time-of-flight ion scattering and recoil spectroscopy (TOF-SARS) as a nondestructive, [ital in] [ital situ], real-time probe of thin film composition and structure which does not physically interfere with the deposition process. Several TOF-SARS implementations are exceptionally surface specific, yet in a properly designed system can yield high-resolution data at ambient pressures well in excess of 10 mTorr (4--6 orders of magnitude higher than conventional surface analytic methods). Because of the exceptional surface specificity of these methods, TOF-SARS is ideally suited as a means of studying ultrathin layers and atomically abrupt interfaces. TOF-SARS instrumentation designed specifically for use as an [ital in] [ital situ], real-time monitor of growth processes for single and multicomponent thin films and layered structures is described here. Representative data are shown for [ital in] [ital situ] analysis of Pb and Zr layers at room temperature and high vacuum, as well as under conditions appropriate to the growth of Pb(Zr[sub [ital x]]Ti[sub 1[minus][ital x]])O[sub 3] (PZT) perovskite films on MgO and RuO[sub 2] substrates.

• OSTI ID: 7025164
• Journal Information: Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (United States), Journal Name: Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (United States) Vol. 12:4; ISSN 0734-2101; ISSN JVTAD6
• Country of Publication: United States
• Language: English

Related Subjects

665300* -- Interactions Between Beams & Condensed Matter-- (1992-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
DESIGN
ELEMENTS
ENERGY RANGE
FILMS
ION SPECTROSCOPY
KEV RANGE
KEV RANGE 01-10
KEV RANGE 10-100
LEAD
LEAD COMPOUNDS
METALS
MONITORING
OXYGEN COMPOUNDS
PZT
REAL TIME SYSTEMS
SPECTROSCOPY
SURFACES
THIN FILMS
TITANATES
TITANIUM COMPOUNDS
TRANSITION ELEMENT COMPOUNDS
TRANSITION ELEMENTS
ZIRCONATES
ZIRCONIUM
ZIRCONIUM COMPOUNDS