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Effects of nitrogen doping on the growth and properties of plasma-enhanced chemical-vapor-deposited diamond-like-carbon films

Journal Article · · Journal of Electronic Materials (A.I.M.E. Metallurgical Society); (United States)
DOI:https://doi.org/10.1007/BF02670661· OSTI ID:7020433
; ;  [1]
  1. Univ. of Arkansas, Fayetteville, AR (United States)

Nitrogen-doped diamond-like carbon (DLC) or amorphous hydrogenated carbon (a-C:H) films were grown by plasma enhanced chemical vapor deposition using methane and nitrogen gases as precursors. The effects of nitrogen trifluoride (NF[sub 3]) on these nitrogen-doped DLC films were also investigated. The deposition rate decreases sharply with the addition of nitrogen in the absence of NF[sub 3] due to dilution, while it increases in the presence of NF[sub 3] due, presumably, to the reduction of activated hydrogen species by the fluorine radical (F[sup [minus]]). X-ray photoelectron spectra reveal a nitrogen concentration in the range of 9.3 to 13.8% in these DLC films with a C 1s electron binding energy of 287-288 eV, indicating the diamond-like structure. Infrared spectra of DLC films indicate the presence of amino groups (N-H) and nitrile and/or isonitrile (C [triple bond] V N) groups giving strong evidence of sp carbon. Diamond like carbon films deposited in CH[sub 4] + N[sub 2] (with and without NF[sub 3]) have a lower refractive index, a lower bulk resistivity, and a lower optical bandgap than films deposited using CH[sub 4] due to a lower hydrogen content in the films. 19 refs., 12 figs., 3 tabs.

OSTI ID:
7020433
Journal Information:
Journal of Electronic Materials (A.I.M.E. Metallurgical Society); (United States), Journal Name: Journal of Electronic Materials (A.I.M.E. Metallurgical Society); (United States) Vol. 23:6; ISSN JECMA5; ISSN 0361-5235
Country of Publication:
United States
Language:
English