Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Hydrogen-free diamond-like carbon deposited by a layer-by-layer technique using PECVD

Journal Article · · International Journal of Modern Physics B
The authors developed a hydrogen-free diamond like carbon (DLC) film by a novel deposition technique of a layer-by-layer technique using plasma enhanced chemical vapor deposition (PECVD) in which a repeated deposition of a thin DLC layer and subsequently CF{sub 4} plasma treatment on its surface have been carried out. The electrical, optical and structural properties of the DLC films deposited depend on the CF{sub 4} plasma exposure time. The hydrogen content is less than 1 at % when the CF{sub 4} plasma exposure time is 140s. Its emission current is much higher and stability is much improved compared with conventional DLC.N-type, hydrogen-free DLC could be obtained by N ion doping or by N{sub 2} gas-phase doping in the CH{sub 4} plasma. The optimum [N{sub 2}]/[CH{sub 4}] flow rate ratio was found to be 9% for the efficient electron emission, at which the onset-field was 7.2 V/{micro}m. The nitrogen gas-phase doped hydrogen-free DLC coating on Mo tip field emitter arrays (FEAs) increased the electron emission current from 160{micro}A to 1.52 mA and improved the stability in electron emission current.
Research Organization:
Kyung Hee Univ., Seoul (KR)
OSTI ID:
20023261
Journal Information:
International Journal of Modern Physics B, Journal Name: International Journal of Modern Physics B Journal Issue: 2-3 Vol. 14; ISSN IJPBEV; ISSN 0217-9792
Country of Publication:
United States
Language:
English

Similar Records

Deposition of {bold {ital n}}-type diamondlike carbon by using the layer-by-layer technique and its electron emission properties
Journal Article · Fri Feb 28 23:00:00 EST 1997 · Applied Physics Letters · OSTI ID:495237

Electron field emission from undoped and doped DLC films
Conference · Wed Mar 31 23:00:00 EST 1999 · OSTI ID:11327

High efficiency polycrystalline silicon solar cells using low temperature PECVD process
Journal Article · Thu Oct 01 00:00:00 EDT 1998 · IEEE Transactions on Electron Devices · OSTI ID:669840