Spectral properties of a 1. 3-micrometers InGaAsP diode laser under direct modulation. Final report, September 1987-February 1988
Technical Report
·
OSTI ID:7019991
Direct modulation of a buried heterostructure (BH) InGaAsP laser diode was performed up to 18 GHz, and FM properties were observed. The number of lasing modes increased with increasing modulation depth. For a given rf power, the FM index went from 0.7 to 0 as the modulation frequency was increased. These measurements indicate that the nonlinear gain effects mainly influence the modulation characteristics of this laser, and wider bandwidths and modulation indexes can be achieved in this type of multimode device.
- Research Organization:
- Harry Diamond Labs., Adelphi, MD (USA)
- OSTI ID:
- 7019991
- Report Number(s):
- AD-A-220066/5/XAB; HDL-TR--2165
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
AMPLIFICATION
CURRENTS
DIRECT CURRENT
DOCUMENT TYPES
ELECTRIC CURRENTS
FREQUENCY MODULATION
GAIN
LASERS
MODULATION
NONLINEAR OPTICS
OPTICS
PROGRESS REPORT
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR LASERS
SOLID STATE LASERS
SPECTRA
426002* -- Engineering-- Lasers & Masers-- (1990-)
AMPLIFICATION
CURRENTS
DIRECT CURRENT
DOCUMENT TYPES
ELECTRIC CURRENTS
FREQUENCY MODULATION
GAIN
LASERS
MODULATION
NONLINEAR OPTICS
OPTICS
PROGRESS REPORT
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR LASERS
SOLID STATE LASERS
SPECTRA