12. 5-GHz direct modulation bandwidth of vapor phase regrown 1. 3-. mu. m InGaAsP buried heterostructure lasers

Journal Article · Fri Feb 15 04:00:00 EST 1985 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.95625· OSTI ID:5938536

Su, C B; Lanzisera, V; Powazinik, W; Meland, E; Olshansky, R; Lauer, R B

A small-signal modulation bandwidth of 12.5 GHz is reported for vapor phase regrown 1.3-..mu..m InGaAsP buried heterostructure (BH) lasers operated at a bias optical power of only 6.9 mW/facet. The bandwidth per square root of bias optical power is a factor of 1.6 higher than previous best results. In addition, the optical modulation amplitude remains flat to 12 GHz in sharp contrast to other types of BH lasers which exhibit signal roll-off at frequencies below the resonance frequency. The wide modulation bandwidth is attained by increasing the p-doping level in the active region and by the choice of short cavity length. The device is grown on a conductive substrate, indicating that it is unnecessary to use a semi-insulating substrate to obtain flat optical response in vapor phase regrown BH lasers.

• Research Organization: Opto Electronic Devices, GTE Laboratories Inc., 40 Sylvan Road, Waltham, Massachusetts 02254
• OSTI ID: 5938536
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 46:4; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
DATA
EPITAXY
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFORMATION
LASERS
MODULATION
NUMERICAL DATA
OPERATION
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
POWER
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
VAPOR PHASE EPITAXY