Ultra-high-speed modulation of 1. 3-. mu. m InGaAsP diode lasers

Journal Article · Mon Sep 01 04:00:00 EDT 1986 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/JQE.1986.1073192· OSTI ID:5185545

Su, C B; Lanzisera, V A

The differential gain of 1.3 ..mu..m InGaAsP lasers is found to be a strong function of the active layer doping level. Using devices with doping enhanced differential gain and short cavity lengths, a modulation bandwidth of 15 GHz is achieved. The parasitic shunt capacitance which often severely limits the modulation bandwidth of diode lasers is greatly reduced by using a 0.4 ..mu..m thick oxide isolation layer and a device structure which minimizes parasitic capacitances. It is found that nonlinear gain saturation predominantly determines the damping factor of these devices, and thus greatly influences their modulation characteristics. The contribution of nonlinear gain to the FM modulation index and relaxation oscillation damping factor is calculated and measured. The nonlinear gain contribution to the damping factor obtained from the measured FM modulation index is used to predict the optical intensity modulation response. Excellent agreement between prediction and observation is obtained. These data directly show that the damping factor of multilongitudinal-mode lasers is smaller that that of single-mode lasers, suggesting that wider modulation bandwidths can be achieved with multimode devices than with single-mode devices.

• Research Organization: GTE Labs., Inc., Waltham, MA 02254
• OSTI ID: 5185545
• Journal Information: IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. QE-22:9; ISSN IEJQA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
BAND THEORY
CAPACITANCE
CRYSTAL DOPING
DAMPING
ELECTRICAL PROPERTIES
FREQUENCY MODULATION
FREQUENCY RANGE
GAIN
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
GHZ RANGE
GHZ RANGE 01-100
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LASER CAVITIES
LASERS
MODULATION
NONLINEAR OPTICS
OPTICS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS