Chemical vapor deposition of aluminum nitride thin films

Journal Article · Wed Jul 01 04:00:00 EDT 1992 · Journal of Materials Research; (United States)

DOI:https://doi.org/10.1557/JMR.1992.1679· OSTI ID:7018863

Gordon, R G; Riaz, U ^[1]; Hoffman, D M ^[2]

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1. Department of Chemistry, Harvard University, 12 Oxford Street, Cambridge, Massachusetts 02138 (United States)
2. Department of Chemistry, University of Houston, Houston, Texas 77204 (United States)

The atmospheric pressure chemical vapor deposition of aluminum nitride coatings from hexakis(dimethylamido)dialuminum, Al{sub 2}(N(CH{sub 3}){sub 2}){sub 6}, and ammonia precursors is reported. The films were characterized by ellipsometry, transmission electron microscopy, x-ray photoelectron spectroscopy, Rutherford backscattering, and forward recoil spectrometry. The films were deposited at 100--500 {degree}C with growth rates up to 1500 A/min. The films showed good adhesion to silicon, glass, and quartz substrates and were chemically inert. Rutherford backscattering analysis revealed that the N/Al ratio was 1.15{plus minus}0.05 for films deposited at 100--200 {degree}C and 1.05{plus minus}0.05 for those deposited at 300--500 {degree}C. Films deposited at 100--200 {degree}C had refractive indexes in the range 1.65--1.80 whereas indexes for films deposited at 300--400 {degree}C were 1.86--2.04. The films were transparent in the visible region. The optical bandgap varied from 5.0 eV for films deposited at 100 {degree}C to 5.77 eV for those deposited at 500 {degree}C. Films deposited at 100--200 {degree}C were amorphous whereas those deposited at 300--500 {degree}C were polycrystalline.

• DOE Contract Number: FG05-86ER75287
• OSTI ID: 7018863
• Journal Information: Journal of Materials Research; (United States), Journal Name: Journal of Materials Research; (United States) Vol. 7:7; ISSN JMREE; ISSN 0884-2914
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360201* -- Ceramics
Cermets
& Refractories-- Preparation & Fabrication
ALUMINIUM COMPOUNDS
ALUMINIUM NITRIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
DEPOSITION
ELASTIC SCATTERING
ELECTROMAGNETIC RADIATION
ELECTRON MICROSCOPY
ELECTRON SPECTROSCOPY
ELLIPSOMETRY
FILMS
IONIZING RADIATIONS
MEASURING METHODS
MEDIUM PRESSURE
MICROSCOPY
NITRIDES
NITROGEN COMPOUNDS
OPTICAL PROPERTIES
PHOTOELECTRON SPECTROSCOPY
PHYSICAL PROPERTIES
PNICTIDES
RADIATIONS
REFRACTIVE INDEX
RUTHERFORD SCATTERING
SCATTERING
SPECTROSCOPY
SURFACE COATING
TEMPERATURE RANGE
TEMPERATURE RANGE 0273-0400 K
TEMPERATURE RANGE 0400-1000 K
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY
X RADIATION