Metalorganic chemical vapor deposition (MOCVD) of aluminum and gallium nitride thin films
Book
·
OSTI ID:417634
- Univ. of Houston, TX (United States)
High quality aluminum and gallium nitride thin films were prepared from hexakis(dimethylamido)dimetal complexes, M{sub 2}(NMe{sub 2}){sub 6} (M = Al, Ga, Me = CH{sub 3}), and ammonia at substrate temperatures as low as 200 C by using low pressure thermal and plasma enhanced chemical vapor deposition. 20 refs., 6 figs., 3 tabs.
- Sponsoring Organization:
- Texas Center for Superconductivity, Houston, TX (United States)
- OSTI ID:
- 417634
- Report Number(s):
- CONF-960502--; ISBN 1-56677-163-3
- Country of Publication:
- United States
- Language:
- English
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