Characterization of surfaces, thin films, and ion implanted silicon by spectroscopic ellipsometry

Thesis/Dissertation · Tue Jan 01 04:00:00 EST 1985

OSTI ID:7015316

McMarr, P J

A spectroscopic ellipsometer of the rotating analyzer configuration was constructed. This instrument operates over the photon energy range of 2.0 to 4.5 eV. A computer program was developed to interpret the data acquired using the spectroscopic ellipsometer. With the aid of this program, the film detectability limit of the instrument was determined to be less than 1A. A series of noncrystalline Si films were characterized through the use of spectroscopic ellipsometry. The void fraction and microscopic roughness of these samples were determined through incorporation of effective medium approximations to the modeling program. These results were compared to scanning electron micrographs for the samples. Good qualitative agreement between the results of spectroscopic ellipsometry and the scanning electron micrographs was established. A series of samples of single crystal Si were prepared using ion implantation. Spectroscopic ellipsometry measurements were performed on these samples. The implanted samples were ion-milled and cross-section transmission electron micrographs were produced. These micrographs were compared to the results of spectroscopic ellipsometry. The comparison showed excellent agreement.

• Research Organization: Pennsylvania State Univ., University Park (USA)
• OSTI ID: 7015316
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605 -- Materials-- Radiation Effects
656003* -- Condensed Matter Physics-- Interactions between Beams & Condensed Matter-- (1987-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTALS
ELECTRON MICROSCOPY
ELEMENTS
ELLIPSOMETRY
FILMS
ION IMPLANTATION
MEASURING METHODS
MICROSCOPY
MONOCRYSTALS
SEMIMETALS
SILICON
SPECTROSCOPY
SURFACES
THIN FILMS