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Modeling of ambient-meniscus melt interactions associated with carbon and oxygen transport in EFG of silicon ribbon

Journal Article · · J. Electrochem. Soc.; (United States)
DOI:https://doi.org/10.1149/1.2124150· OSTI ID:7012198
Impurity transport processes associated with interaction of reactive ambient gases and meniscus melt during growth of silicon ribbon by the edge-defined film-fed growth (EFG) technique have been investigated with the help of numerical solution of mass and momentum transport equations. The transport of oxygen and carbon is examined in detail. It is shown that oxygen transport from meniscus sources can account for the interstitial oxygen observed to be introduced into ribbon grown with Co/sub 2/ in the meniscus ambient. Growth speed is the process parameter that has the most pronounced influence on ribbon impurity levels when a source or sink for the impurity is present on the meniscus surface. 14 refs.
Research Organization:
Mobil Tyco Sol Energy Corp, Waltham, Mass, USA
OSTI ID:
7012198
Journal Information:
J. Electrochem. Soc.; (United States), Journal Name: J. Electrochem. Soc.; (United States) Vol. 129:6; ISSN JESOA
Country of Publication:
United States
Language:
English