Defects in high speed growth of EFG silicon ribbon

Technical Report · Sun Apr 01 04:00:00 EST 1984

OSTI ID:6151509

Rao, C V.H.N.; Cretella, M C

Silicon ribbons grown by the Edge-defined Film-fed Growth (EFG) technique exhibit a characteristic defect structure typified by twins, dislocations, grain boundaries and silicon carbide inclusions. As growth speed is increased from less than 2.5 cm per minute, the structural details change. The major difference between the ribbons grown at speeds below and above 2.5 cm per minute is in the generation of a cellular structure at the higher growth speeds, observable in the ribbon cross section. The presence of the cross sectional structure leads, in general, to a reduction in cell performance. Models to explain the formation of such a cross sectional structure are presented and discussed.

• Research Organization: Mobil Tyco Solar Energy Corp., Waltham, MA (USA)
• OSTI ID: 6151509
• Report Number(s): N-84-28642
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
CRYSTAL DEFECTS
CRYSTAL GROWTH
CRYSTAL GROWTH METHODS
CRYSTAL STRUCTURE
DIRECT ENERGY CONVERTERS
EFG METHOD
ELECTRICAL PROPERTIES
ELEMENTS
EQUIPMENT
FABRICATION
GRAIN BOUNDARIES
INCLUSIONS
MICROSTRUCTURE
NONMETALS
OXYGEN
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT