Processed-induced defects in EFG ribbons

Technical Report · Sat May 01 04:00:00 EDT 1982

OSTI ID:5357773

Cunningham, B; Ast, D G

The defect structure of processed edge defined film-fed growth (EFG) silicon ribbons has been studied using a variety of electron microscopic techniques. Comparison between the present results and previous studies on as-grown ribbons has shown that solar cell processing introduces additional defects into the ribbons. The creation of point defects during high temperature phosphorus diffusion induces dislocation climb, resulting in the formation of dislocation helices in the diffused layer. The base regions of the processed ribbons contain low-angle tilt boundaries which are formed during processing. Small precipitates, approx. 20 nm in size, are found at the low-angle boundaries. In addition, larger precipitates, approx. l..mu..m in size, have been identified. Possible formation mechanisms for these precipitates are discussed.

• Research Organization: Jet Propulsion Lab., Pasadena, CA (USA); Cornell Univ., Ithaca, NY (USA). Dept. of Materials Science and Engineering
• DOE Contract Number: NAS-7-100-956046
• OSTI ID: 5357773
• Report Number(s): DOE/JPL/956046-4; ON: DE82016641
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
CRYSTAL DEFECTS
CRYSTAL GROWTH METHODS
CRYSTAL STRUCTURE
DIFFUSION
DIRECT ENERGY CONVERTERS
DISLOCATIONS
EFG METHOD
ELECTRON MICROSCOPY
ELEMENTS
EQUIPMENT
FABRICATION
LINE DEFECTS
MICROSCOPY
NONMETALS
NUCLEATION
PHOSPHORUS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
POINT DEFECTS
PRECIPITATION
SEMIMETALS
SEPARATION PROCESSES
SILICON
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT