EBIC/TEM investigations of process-induced defects in EFG silicon ribbon

Technical Report · Tue Dec 01 04:00:00 EST 1981

DOI:https://doi.org/10.2172/5748434· OSTI ID:5748434

Cunningham, B.; Ast, D. G.

EBIC and STEM observations on unprocessed and processed EFG ribbon show that the phosphorus diffused junction depth is not uniform, and that a variety of chemical impurities precipitate out during processing. Two kinds of precipitates are found: (1) 10 nm or less in size, located at the dislocation nodes in sub-boundary like dislocation arrangements formed during processing and (2) large precipitates, the chemical composition of which has been partially identified. These large precipitates emit dense dislocations tangles into the adjacent crystal volume.

• Research Organization: Cornell Univ., Ithaca, NY (USA). Dept. of Materials Science and Engineering
• DOE Contract Number: NAS-7-100-954852
• OSTI ID: 5748434
• Report Number(s): DOE/JPL/954852-8; ON: DE82011123
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
CRYSTAL DEFECTS
CRYSTAL GROWTH METHODS
CRYSTAL STRUCTURE
CURRENTS
DEFECTS
DISLOCATIONS
EDDY CURRENTS
EFG METHOD
ELECTRIC CURRENTS
ELECTRON MICROSCOPY
ELEMENTS
IMPURITIES
LINE DEFECTS
MICROSCOPY
NONMETALS
PHOSPHORUS
SEMIMETALS
SILICON
SPECTRA
TRANSMISSION ELECTRON MICROSCOPY
X-RAY SPECTRA