Silicon Ribbon Growth by a Capillary Action Shaping Technique

Technical Report · Tue Jun 15 04:00:00 EDT 1976

DOI:https://doi.org/10.2172/1087136· OSTI ID:1087136

Schwuttke, G. H. ^[1]; Cizeck, T. F. ^[1]; Kran, A. ^[1]

---

1. Energy Technology Engineering Center (ETEC), Canoga Park, CA (United States)

The crystal-growth method under investigation is a capillary action shaping technique. Meniscus shaping for the desired ribbon geometry occurs at the vertex of a wettable die. As ribbon growth depletes the melt meniscus, capillary. action. supplies replacement material. In this report, a new capillary die design is described. It represents a departure from the die types used for edge-defined, film-fed growth, in that the bounding edges of the die top are not parallel or concentric with the growing ribbon. The new dies allow a higher melt meniscus with concomitant improvements in surface smoothness and freedom from SiC surface particles, which can degrade perfection. Also in this reporting period, ribbons were grown for delivery to JPL. Twenty ribbons and 30 ribbon samples were shipped. Detailed dimensional characteristics of most ribbons grown during the past year are presented. Finally, our initial progress in the growth of 38-mm (1-1/2-inch)-wide ribbons, up to 46 cm in length, is reported.

• Research Organization: Energy Technology Engineering Center (ETEC), Canoga Park, CA (United States)
• Sponsoring Organization: USDOE
• OSTI ID: 1087136
• Report Number(s): ERDAJPL--954144762
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE