Silicon ribbon growth by a capillary action shaping technique. Final report, May 8, 1975--November 8, 1977

Technical Report · Sat Jan 01 04:00:00 EST 1977

OSTI ID:6400061

Schwuttke, G H; Ciszek, T F; Kran, A

The crystal growth method under investigation is a capillary action shaping technique. Meniscus shaping for the desired ribbon geometry occurs at the vertex of a wettable die. As ribbon growth depletes the melt meniscus, capillary action supplies replacement material. The objective of the work is to attain a clear technological assessment of silicon ribbon growth by the capillary action shaping technique and to enhance the applicability of the technique to photovoltaic power device material. The results of crystal growth studies, structural and electrical characterization of cast silicon ribbons, and a silicon ribbon technology assessment are described. (WHK)

• Research Organization: International Business Machines Corp., Hopewell Junction, NY (USA). East Fishkill Lab.
• DOE Contract Number: NAS-7-100-954144
• OSTI ID: 6400061
• Report Number(s): DOE/JPL/954144-1
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
360603 -- Materials-- Properties
CAPILLARY FLOW
CARBIDES
CARBON COMPOUNDS
CRYSTAL DEFECTS
CRYSTAL GROWTH
CRYSTAL STRUCTURE
DIES
DIRECT ENERGY CONVERTERS
ELECTRICAL PROPERTIES
ELEMENTS
FABRICATION
FLUID FLOW
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
SEMIMETALS
SILICON
SILICON CARBIDES
SILICON COMPOUNDS
SILICON SOLAR CELLS
SOLAR CELLS
TECHNOLOGY ASSESSMENT