Silicon ribbon growth by a capillary action shaping technique. Annual report (Quarterly technical progress report No. 9)

Technical Report · Sat Oct 01 04:00:00 EDT 1977

DOI:https://doi.org/10.2172/5229221· OSTI ID:5229221

Schwuttke, G. H.; Ciszek, T. F.; Kran, A.

Progress on the technological and economical assessment of ribbon growth of silicon by a capillary action shaping technique is reported. Progress in scale-up of the process from 50 mm to 100 mm ribbon widths is presented, the use of vitreous carbon as a crucible material is analyzed, and preliminary tests of CVD Si/sub 3/N/sub 4/ as a potential die material are reported. Diffusion length measurements by SEM, equipment and procedure for defect display under MOS structure in silicon ribbon for lifetime interpretation, and an assessment of ribbon technology are discussed. (WHK)

• Research Organization: International Business Machines Corp., Hopewell Junction, NY (USA). East Fishkill Lab.
• DOE Contract Number: NAS-7-100-954144
• OSTI ID: 5229221
• Report Number(s): ERDA/JPL/954144-77/3
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
CAPILLARY FLOW
CRUCIBLES
CRYSTAL DEFECTS
CRYSTAL GROWTH
CRYSTAL STRUCTURE
DIFFUSION LENGTH
DIRECT ENERGY CONVERTERS
DISLOCATIONS
ECONOMICS
ELECTRON MICROSCOPY
ELEMENTS
FLUID FLOW
FORECASTING
GRAIN BOUNDARIES
LINE DEFECTS
MICROSCOPY
MICROSTRUCTURE
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SEMIMETALS
SERVICE LIFE
SILICON
SILICON SOLAR CELLS
SOLAR CELLS
TECHNOLOGY ASSESSMENT