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U.S. Department of Energy
Office of Scientific and Technical Information

Silicon ribbon growth by a capillary action shaping technique. Annual report

Technical Report ·
OSTI ID:7357727
A new capillary action shaping technique die was designed. This new die allows improvements in surface smoothness and in SiC surface-particle density. Forty-seven ribbons greater than 0.5 meter long and 25 mm wide were grown during the last quarter. Ribbon width was extended to 38 mm (1/sup 1///sub 2/ inches). Surface films on ribbon surfaces were analyzed as SiC crystallites. Epitaxial growth of SiC through preferential incorporation of (111) SiC planes parallel to (111) silicon planes was identified as an important mechanism for surface film formation. Development of a new technology-forecasting technique was continued. This technique is being applied to projecting the future cost of energy at the level of silicon-sheet material. Silicon-sheet technology was shown to have the potential for achieving future low-cost material objectives for photovoltaic applications. 1980 and 1985 energy-capacity costs of $750/kWE and $350/kWE, respectively, at the level of silicon-sheet material, are projected. (WDM)
Research Organization:
International Business Machines Corp., Hopewell Junction, N.Y. (USA). East Fishkill Lab.
DOE Contract Number:
NAS-7-100-954144
OSTI ID:
7357727
Report Number(s):
ERDA/JPL/954144-76/02
Country of Publication:
United States
Language:
English