Oxides and oxynitrides of porous silicon

Conference · Thu Dec 31 23:00:00 EST 1987

OSTI ID:7010659

Tsao, S S; Guilinger, T R; Kelly, M J; Knapp, J A; Stein, H J; Barbour, J C

In this paper we present preliminary results on the formation of oxynitride films by nitridation of porous silicon in ammonia. We compare the composition and electrical breakdown properties of nitrided and oxidized porous silicon. We show that an ammonia anneal at 1000/degree/C for 1 hour can convert porous silicon into a porous oxynitride layer with substantial amounts of nitrogen (/approximately/22 at. %). However, this ammonia treatment by itself leads to insulating layers with poor electrical breakdown properties. Combining the ammonia treatment with thermal oxidation increases the breakdown strength of the porous silicon-based oxynitride films. 4 refs., 2 figs.

• Research Organization: Sandia National Labs., Albuquerque, NM (USA)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 7010659
• Report Number(s): SAND-88-1668C; CONF-881155-2; ON: TI89000301
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
360603 -- Materials-- Properties
42 ENGINEERING
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
AMMONIA
ANNEALING
CHALCOGENIDES
CHEMICAL REACTIONS
ELECTRICAL FAULTS
ELEMENTS
FILMS
HEAT TREATMENTS
HYDRIDES
HYDROGEN COMPOUNDS
INTERFACES
LAYERS
NITRIDATION
NITROGEN COMPOUNDS
NITROGEN HYDRIDES
OXIDATION
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
POROSITY
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICON