Issues on oxynitride films
Compositions and related properties for oxynitride films formed by various methods are reviewed. In chemical-vapor-deposited films, Si-N vibrational absorption is sensitive to changes in local bonding introduced by small percentages of oxygen in silicon nitride. Elemental analysis and infrared absorption indicate that nitridation of thin oxide films produces oxynitride layers with compositions approaching Si/sub 2/N/sub 2/O. Hydrogen is an important constituent in films and film stacks. In nitride oxide films, hydrogen in the presence of N is associated with electron traps. Optimization of nonvolatile memory characteristics of oxynitride-oxide-Si stacks by hydrogenation involves alteration of the near interface region in the oxynitride, passivation of Si/Si/sub 2/O interface states, and possible regrowth of the Si/Si/sub 2/O interface. Consistent trends involving diffusion chemical changes and layer differentiation during high temperature processing occur for films of different origins and compositions. 41 refs., 13 figs., 1 tab.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (USA)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 6946494
- Report Number(s):
- SAND-88-1248C; CONF-881061-7; ON: DE89002363
- Country of Publication:
- United States
- Language:
- English
Similar Records
Characterization of oxynitride dielectric films grown in NO/O{sub 2} mixtures by rapid thermal oxynitridation
Oxides and oxynitrides of porous silicon
Related Subjects
360201 -- Ceramics
Cermets
& Refractories-- Preparation & Fabrication
360202* -- Ceramics
Cermets
& Refractories-- Structure & Phase Studies
ANNEALING
CHALCOGENIDES
CHEMICAL COATING
CHEMICAL REACTIONS
CHEMICAL VAPOR DEPOSITION
CRYSTAL STRUCTURE
DEPOSITION
DOCUMENT TYPES
FILMS
HEAT TREATMENTS
HYDROGENATION
INFRARED SPECTRA
ION IMPLANTATION
MICROSTRUCTURE
NITRIDATION
NITRIDES
NITROGEN COMPOUNDS
OXIDATION
OXIDES
OXYGEN COMPOUNDS
PNICTIDES
REVIEWS
SILICON COMPOUNDS
SILICON NITRIDES
SILICON OXIDES
SPECTRA
SURFACE COATING