Fabrication and electrical characterization of 0.55eV {ital N}-on-{ital P} InGaAs TPV devices
Results are presented on the characterization and testing of lattice-mismatched 0.55 eV InGaAs/InP thermophotovoltaic (TPV) cells. A robust cell fabrication technique amenable to high throughput production is presented. A versatile light and dark I-V set up capable of fast screening of the TPV cells and an innovative approach for screening high performance cells are presented. We also report on the effect of lattice-matched InAsP and InAlAs back surface field layers on the performance of the TPV cells. {copyright} {ital 1999 American Institute of Physics.}
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 700927
- Report Number(s):
- CONF-981055--
- Journal Information:
- AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 460; ISSN APCPCS; ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
Similar Records
Fabrication and electrical characterization of 0. 55eV [ital N]-on-[ital P] InGaAs TPV devices
Fabrication and electrical characterization of 0.55 eV n-on-p InGaAs thermophotovoltaic devices
Multijunction InGaAs thermophotovoltaic devices
Conference
·
Sun Feb 28 23:00:00 EST 1999
· AIP Conference Proceedings
·
OSTI ID:5986541
Fabrication and electrical characterization of 0.55 eV n-on-p InGaAs thermophotovoltaic devices
Technical Report
·
Thu Oct 01 00:00:00 EDT 1998
·
OSTI ID:307868
Multijunction InGaAs thermophotovoltaic devices
Conference
·
Wed Dec 30 23:00:00 EST 1998
·
OSTI ID:323667