Fabrication and electrical characterization of 0.55 eV n-on-p InGaAs thermophotovoltaic devices

Technical Report · Thu Oct 01 00:00:00 EDT 1998

DOI:https://doi.org/10.2172/307868· OSTI ID:307868

Nishikawa, W; Joslin, D; Krut, D; Eldredge, J; Takahashi, M; Haddad, M; Karam, N H ^[1]; Narayanan, A ^[2]; Al-Jassim, M M ^[3]

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1. Spectrolab Inc., Sylmar, CA (United States)
2. HRL Labs., Malibu, CA (United States)
3. National Renewable Energy Lab., Golden, CO (United States)

Results are presented on the characterization and testing of lattice mismatched 0.55 eV InGaAs/InP thermophotovoltaic (TPV) cells. A robust cell fabrication technique amenable to high throughput production is presented. A versatile light and dark I-V set up capable of fast screening of the TPV cells and an innovative approach for screening high performance cells are presented. The authors also report on the effect of lattice matched InAsP and InAlAs back surface field on the performance of the TPV cells.

• Research Organization: Knolls Atomic Power Lab., Schenectady, NY (United States)
• Sponsoring Organization: USDOE Assistant Secretary for Nuclear Energy, Washington, DC (United States)
• DOE Contract Number: AC12-76SN00052
• OSTI ID: 307868
• Report Number(s): KAPL-P--000124; K--98168; CONF-981055--; ON: DE99001630
• Country of Publication: United States
• Language: English

Related Subjects

30 DIRECT ENERGY CONVERSION
36 MATERIALS SCIENCE
ALUMINIUM ARSENIDES
ELECTRICAL PROPERTIES
EXPERIMENTAL DATA
FABRICATION
GALLIUM ARSENIDES
INDIUM ARSENIDES
INDIUM PHOSPHIDES
PERFORMANCE
QUANTUM EFFICIENCY
THERMOPHOTOVOLTAIC CONVERTERS
VAPOR PHASE EPITAXY