Fabrication and electrical characterization of 0. 55eV [ital N]-on-[ital P] InGaAs TPV devices

Conference · Sun Feb 28 23:00:00 EST 1999 · AIP Conference Proceedings

OSTI ID:5986541

Nishikawa, W; Joslin, D; Krut, D; Eldredge, J; Takahashi, M; Haddad, M

Results are presented on the characterization and testing of lattice-mismatched 0.55 eV InGaAs/InP thermophotovoltaic (TPV) cells. A robust cell fabrication technique amenable to high throughput production is presented. A versatile light and dark I-V set up capable of fast screening of the TPV cells and an innovative approach for screening high performance cells are presented. We also report on the effect of lattice-matched InAsP and InAlAs back surface field layers on the performance of the TPV cells. [copyright] [ital 1999 American Institute of Physics.]

• OSTI ID: 5986541
• Report Number(s): CONF-981055--
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Vol. 460:1; ISSN APCPCS; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
140600 -- Solar Energy-- Photovoltaic Power Systems
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CONVERSION
DIRECT ENERGY CONVERSION
DIRECT ENERGY CONVERTERS
ENERGY CONVERSION
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
PERFORMANCE
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
TESTING
THERMOPHOTOVOLTAIC CONVERTERS