Growth and structure of epitaxial zinc oxide films

Journal Article · Sun Jan 31 23:00:00 EST 1988 · Inorg. Mater. (Engl. Transl.); (United States)

OSTI ID:7008488

Grin', V F; Noskov, A I; Sal'kov, E A; Chalaya, V G

We have examined ZnO films made by chemical transport in hydrogen containing a little water vapor and deposited on unoriented single-crystal sapphire or gallium phosphide substrates oriented in the (111)B and (100) planes. The source was ZnO powder at 750-1000/sup 0/C. The films grew at 550-700/sup 0/C for 1-4 h with the mixture traveling from the source to the substrate. At the end growth, the reactor containing the source and the substrates was cooled slowly, while the gas flow was reversed to eliminate uncontrolled growth. The thicknesses were 7-20 ..mu..m, and the resistivities were 0.05.1 Omega x cm, carrier mobilities 5-50 cm/sup 2//V x sec.

• OSTI ID: 7008488
• Journal Information: Inorg. Mater. (Engl. Transl.); (United States), Journal Name: Inorg. Mater. (Engl. Transl.); (United States) Vol. 23:9; ISSN INOMA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360202* -- Ceramics
Cermets
& Refractories-- Structure & Phase Studies
360204 -- Ceramics
Cermets
& Refractories-- Physical Properties
ALUMINIUM COMPOUNDS
ALUMINIUM OXIDES
CHALCOGENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
COHERENT SCATTERING
CORUNDUM
CRYSTAL GROWTH
CRYSTAL STRUCTURE
DEPOSITION
DIFFRACTION
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTRICITY
ELECTRON DIFFRACTION
ELECTRON MICROSCOPY
ETCHING
FILMS
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HALL EFFECT
MICROSCOPY
MICROSTRUCTURE
MINERALS
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
PHASE STUDIES
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL PROPERTIES
PIEZOELECTRICITY
PNICTIDES
SAPPHIRE
SCANNING ELECTRON MICROSCOPY
SCATTERING
SUBSTRATES
SURFACE COATING
SURFACE FINISHING
SURFACE TREATMENTS
THIN FILMS
ZINC COMPOUNDS
ZINC OXIDES