Fast neutron radiation effects in siicon detectors fabricated by different thermal oxidation processes

Conference · Sat Aug 01 04:00:00 EDT 1992 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)

OSTI ID:7000056

Li, Z; Kraner, H W ^[1]

---

1. Brookhaven National Lab., Upton, NY (United States)

This paper reports on high resistivity silicon detectors along with MOS capacitors made on five silicon dioxides with different thermal conditions (975[degrees]C to 1200[degrees]C) that have been exposed to fast neutron irradiation up to the fluence of a few times 10[sup 14] n/cm[sup 2]. New measurement techniques such as capacitance-voltage (C-V) of MOS capacitors and current-voltage (I-V) of back to back diodes (p[sup +]-n[sup [minus]]-p[sup +] if n[sup [minus]] is not inverted to ;) or resistors (p[sup +]-p-[sup +] if inverted) have been introduced in this study in monitoring the possible type-inversion (n [yields] p) under high neutron fluence. No type-inversion in the material underneath SiO[sub 2] and the p[sup +] contact has been observed so far in this work for detectors made on the five oxides up to the neutron fluence of a few times 10[sup 13] n/cm[sup 2]. However, it has been found that detectors made on higher temperature oxides (T [ge] 1100[degrees]C) exhibit less leakage current increase at high neutron fluence ([phi] [ge] 10[sup 13] n/cm[sup 2]).

• DOE Contract Number: AC02-76CH00016
• OSTI ID: 7000056
• Report Number(s): CONF-911106--
• Conference Information: Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Journal Volume: 39:4
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605 -- Materials-- Radiation Effects
440100* -- Radiation Instrumentation
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
663610 -- Neutron Physics-- (1992-)
73 NUCLEAR PHYSICS AND RADIATION PHYSICS
BARYONS
CAPACITORS
CHALCOGENIDES
CURRENTS
DAMAGING NEUTRON FLUENCE
ELECTRIC CURRENTS
ELECTRICAL EQUIPMENT
ELEMENTARY PARTICLES
EQUIPMENT
FABRICATION
FAST NEUTRONS
FERMIONS
HADRONS
INTERACTIONS
JUNCTIONS
LEAKAGE CURRENT
LI-DRIFTED DETECTORS
LI-DRIFTED SI DETECTORS
MEASURING INSTRUMENTS
MOS TRANSISTORS
NEUTRON FLUENCE
NEUTRONS
NUCLEONS
OXIDES
OXYGEN COMPOUNDS
P-N JUNCTIONS
PHYSICAL RADIATION EFFECTS
RADIATION DETECTORS
RADIATION EFFECTS
SEMICONDUCTOR DETECTORS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR JUNCTIONS
SI SEMICONDUCTOR DETECTORS
SILICON COMPOUNDS
SILICON OXIDES
TEMPERATURE RANGE
TEMPERATURE RANGE 0400-1000 K
TEMPERATURE RANGE 1000-4000 K
TRANSISTORS