Studies of the dependence on oxidation thermal processes of effects on the electrical properties of silicon detectors by fast neutron radiation
High resistivity silicon detectors along with MOS capacitors made on five silicon dioxides with different thermal conditions (975{degree}C to 1200{degree}C) have been exposed to fast neutron irradiation up to the fluence of a few times 10{sup 14} n/cm{sup 2}. New measurement techniques such as capacitance-voltage (C-V) of MOS capacitors and current-voltage (I-V) of back to back diodes (p{sup +}-n{sup {minus}}- p{sup +} if n{sup {minus}} is not inverted to p) or resistors (p{sup +}-p-p{sup +} if inverted) have been introduced in this study in monitoring the possible type-inversion (n{yields}p) under high neutron fluence. No type-inversion in the material underneath SiO{sub 2} and the p{sup +} contact has been observed so far in this work for detectors made on the five oxides up to the neutron fluence of a few times 10{sup 13} n/cm{sup 2}. However, it has been found that detectors made on higher temperature oxides (T{le} 1100{degree}C) exhibit less leakage current increase at high neutron fluence ({phi} {le} 10{sup 13} n/cm{sup 2}).
- Research Organization:
- Brookhaven National Lab., Upton, NY (United States)
- Sponsoring Organization:
- DOE; USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC02-76CH00016
- OSTI ID:
- 5915795
- Report Number(s):
- BNL-46086; CONF-911106--74; ON: DE92007193
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
BARYONS
CAPACITANCE
CAPACITORS
CHALCOGENIDES
CHEMICAL REACTIONS
CURRENTS
DAMAGING NEUTRON FLUENCE
ELECTRIC CURRENTS
ELECTRIC FIELDS
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
ELEMENTARY PARTICLES
EQUIPMENT
FAST NEUTRONS
FERMIONS
HADRONS
LEAKAGE CURRENT
MEASURING INSTRUMENTS
NEUTRON FLUENCE
NEUTRONS
NUCLEONS
OXIDATION
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
RADIATION DETECTORS
RADIATION EFFECTS
SEMICONDUCTOR DETECTORS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SI SEMICONDUCTOR DETECTORS
SILICON COMPOUNDS
SILICON DIODES
SILICON OXIDES