Studies of the dependence on oxidation thermal processes of effects on the electrical properties of silicon detectors by fast neutron radiation

Conference · Thu Oct 31 23:00:00 EST 1991

OSTI ID:10119101

Li, Zheng; Kraner, H W

High resistivity silicon detectors along with MOS capacitors made on five silicon dioxides with different thermal conditions (975{degree}C to 1200{degree}C) have been exposed to fast neutron irradiation up to the fluence of a few times 10{sup 14} n/cm{sup 2}. New measurement techniques such as capacitance-voltage (C-V) of MOS capacitors and current-voltage (I-V) of back to back diodes (p{sup +}-n{sup {minus}}- p{sup +} if n{sup {minus}} is not inverted to p) or resistors (p{sup +}-p-p{sup +} if inverted) have been introduced in this study in monitoring the possible type-inversion (n{yields}p) under high neutron fluence. No type-inversion in the material underneath SiO{sub 2} and the p{sup +} contact has been observed so far in this work for detectors made on the five oxides up to the neutron fluence of a few times 10{sup 13} n/cm{sup 2}. However, it has been found that detectors made on higher temperature oxides (T{le} 1100{degree}C) exhibit less leakage current increase at high neutron fluence ({phi} {le} 10{sup 13} n/cm{sup 2}).

• Research Organization: Brookhaven National Lab., Upton, NY (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC02-76CH00016
• OSTI ID: 10119101
• Report Number(s): BNL--46086; CONF-911106--74; ON: DE92007193
• Country of Publication: United States
• Language: English

Related Subjects

440104
440200
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CAPACITANCE
CAPACITORS
DAMAGING NEUTRON FLUENCE
ELECTRIC FIELDS
FAST NEUTRONS
HIGH ENERGY PHYSICS INSTRUMENTATION
LEAKAGE CURRENT
OXIDATION
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS ON INSTRUMENT COMPONENTS
INSTRUMENTS
OR ELECTRONIC SYSTEMS
SI SEMICONDUCTOR DETECTORS
SILICON DIODES
SILICON OXIDES