Comparison of heavy-ion- and electron-beam upset data for GaAS SRAMS. Technical report

Technical Report · Thu Jul 16 00:00:00 EDT 1992

OSTI ID:6996310

Flesner, L D; Zuleeg, R; Kolasinski, W A

We report the results of experiments designed to evaluate the extent to which focused electron-beam pulses simulate energetic ion upset phenomena in GaAs memory circuits fabricated by the McDonnell Douglas Astronautics Company. The results of two experimental methods were compared, irradiation by heavy-ion particle beams, and upset mapping using focused electron pulses. Linear energy transfer (LET) thresholds and upset cross sections are derived from the data for both methods. A comparison of results shows good agreement, indicating that for these circuits electron-beam pulse mapping is a viable simulation technique.

• Research Organization: Aerospace Corp., El Segundo, CA (United States). Engineering and Technology Group
• OSTI ID: 6996310
• Report Number(s): AD-A-255901/1/XAB; TR-0090(5940-05)-5; CNN: F04701-88-C-0089
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
MEMORY DEVICES
PHYSICAL RADIATION EFFECTS
ELECTRON BEAMS
GALLIUM ARSENIDES
HEAVY IONS
INTEGRATED CIRCUITS
ION BEAMS
IRRADIATION
LET
MAPPING
PARTICLE BEAMS
SILICON
SIMULATION
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
CHARGED PARTICLES
ELECTRONIC CIRCUITS
ELEMENTS
ENERGY TRANSFER
GALLIUM COMPOUNDS
IONS
LEPTON BEAMS
MICROELECTRONIC CIRCUITS
PNICTIDES
RADIATION EFFECTS
SEMIMETALS
440200* - Radiation Effects on Instrument Components
Instruments
or Electronic Systems