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High-efficiency silicon solar cells by rapid thermal processing

Journal Article · · Applied Physics Letters; (United States)
DOI:https://doi.org/10.1063/1.112801· OSTI ID:6995317
; ; ;  [1];  [2]
  1. University Center of Excellence for Photovoltaics Research and Education, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States)
  2. Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)

Silicon solar cell efficiencies of 16.9% have been achieved on 0.2 [Omega] cm float zone silicon, using a simplified cost effective rapid thermal process (RTP). Although the individual processing steps are not fully optimized yet, this represents the highest reported efficiency for solar cells processed with simultaneous front and back diffusion with no conventional high-temperature furnace steps. A diffusion temperature schedule coupled with an added short [ital in] [ital situ] slow cooling during RTP resulted in greater than 200 [mu]m diffusion length and appropriate diffusion profiles for high efficiency cells. Plasma enhanced chemical vapor deposition (PECVD) of SiN/SiO[sub 2] was used for surface passivation and antireflection coating. Conventional cells fabricated by furnace diffusions and oxidations gave an efficiency of 18.8%. Process optimization can further reduce the gap between the conventional and RTP/PECVD cells.

DOE Contract Number:
AC04-94AL85000
OSTI ID:
6995317
Journal Information:
Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 65:16; ISSN APPLAB; ISSN 0003-6951
Country of Publication:
United States
Language:
English