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U.S. Department of Energy
Office of Scientific and Technical Information

Processes for producing low cost, high efficiency silicon solar cells

Patent ·
OSTI ID:224978

Processes which utilize rapid thermal processing (RTP) are provided for inexpensively producing high efficiency silicon solar cells. The RTP processes preserve minority carrier bulk lifetime {tau} and permit selective adjustment of the depth of the diffused regions, including emitter and back surface field (bsf), within the silicon substrate. Silicon solar cell efficiencies of 16.9% have been achieved. In a first RTP process, an RTP step is utilized to simultaneously diffuse phosphorus and aluminum into the front and back surfaces, respectively, of a silicon substrate. Moreover, an in-situ controlled cooling procedure preserves the carrier bulk lifetime {tau} and permits selective adjustment of the depth of the diffused regions. In a second RTP process, both simultaneous diffusion of the phosphorus and aluminum as well as annealing of the front and back contacts are accomplished during the RTP step. In a third RTP process, the RTP step accomplishes simultaneous diffusion of the phosphorus and aluminum, annealing of the contacts, and annealing of a double-layer antireflection/passivation coating SiN/SiO{sub x}. 26 figs.

Assignee:
Georgia Tech Research Corp., Atlanta, GA (United States)
Patent Number(s):
US 5,510,271/A/
Application Number:
PAN: 8-303,340; CNN: Contract E21-H21; Contract E21-H31
OSTI ID:
224978
Country of Publication:
United States
Language:
English