Characteristics of hydrogenated amorphous silicon-germanium alloys

Journal Article · · Applied Physics Communications; (USA)

DOI:https://doi.org/10.1109/PVSC.1988.105691· OSTI ID:6990264

Luft, W ^[1]

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1. Solar Energy Research Institute, Golden, CO (USA)

Data in the literature are summarized for hydrogenated amorphous silicon-germanium (a-SiGe:H and a-SiGe:H:F) alloys that show the relation between germanium content, hydrogen content, deposition methods, feed-gas mixture, and other deposition parameters, and properties such as the optical band gap, dark and photoconductivities, photosensitivity, Urbach parameter, and spin density. Examining RF glow discharge with both a diode and a triode geometry, DC proximity glow discharge, and photochemical vapor deposition (photo-CVD), using various hydrogen-diluted and undiluted gas mixtures, one observes that hydrogen (or inert gas) dilution is essential for obtaining high photosensitivity in SiGe alloys (in contradistinction to a-Si:H). Hydrogen dilution results in about an order of magnitude higher photosensitivity in a-SiGe:H than do undiluted gas mixtures. Aside from hydrogen dilution, neither the gas mixture nor the deposition method (various glow discharges or photo-CVD) appears to affect the photosensitivity of SiGe alloy films with optical band gaps of approximately 1.5 eV.

• DOE Contract Number: AC02-83CH10093
• OSTI ID: 6990264
• Journal Information: Applied Physics Communications; (USA), Journal Name: Applied Physics Communications; (USA) Vol. 9:1-2; ISSN 0277-9374; ISSN APCOD
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360000* -- Materials
360600 -- Other Materials
360603 -- Materials-- Properties
ALLOYS
CHEMICAL REACTIONS
DATA
DATA ANALYSIS
EXPERIMENTAL DATA
GERMANIUM ALLOYS
HYDROGENATION
INFORMATION
MATERIALS
MEASURING INSTRUMENTS
MEASURING METHODS
NUMERICAL DATA
PHYSICAL PROPERTIES
SEMICONDUCTOR MATERIALS
SILICON ALLOYS