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Alternative deposition processes for hydrogenated amorphous silicon and related alloys

Journal Article · · Applied Physics Communications; (USA)
OSTI ID:6194231
;  [1]
  1. Solar Energy Research Institute, Golden, CO (USA)
Plasma-assisted chemical vapor deposition (CVD), also known as glow discharge deposition, has become the most common technique used in the deposition of hydrogenated amorphous silicon (a-Si:H) for semiconductor device applications. The best-quality a-Si:H material to date is deposited by glow discharge, especially under high vacuum conditions that ensure low impurity levels of oxygen, carbon, and nitrogen. However, the conventional glow discharge deposition method has its limitations. In this report, the authors review several alternative deposition processes to glow discharge for a-Si:H-based alloys. They group these alternative processes into major categories, including (1) modifications of conventional glow discharge, (2) remote-plasma-assisted CVD, (3) photochemical vapor deposition (photo-CVD), (4) thermally-induced CVD, (5) spontaneous CVD, and (6) physical vapor deposition (PVD) methods. They also include in the review posthydrogenation methods for amorphous silicon. The material properties for the resulting a-Si:H(:F) and a-SiGe:H(:F) films are compared for these alternative deposition methods. a-Si:H films nearly as good as those produced by glow discharge have been achieved by photo-CVD.
DOE Contract Number:
AC02-83CH10093
OSTI ID:
6194231
Journal Information:
Applied Physics Communications; (USA), Journal Name: Applied Physics Communications; (USA) Vol. 10:1-2; ISSN 0277-9374; ISSN APCOD
Country of Publication:
United States
Language:
English