Measurement of thermal expansion coefficients of W, WSi, WN, and WSiN thin film metallizations

Journal Article · Mon Jan 15 00:00:00 EST 1990 · Journal of Applied Physics; (USA)

DOI:https://doi.org/10.1063/1.345779· OSTI ID:6989865

Lahav, A; Grim, K A ^[1]; Blech, I A ^[2]

---

1. AT T Bell Laboratories, Reading, Pennsylvania 19612 (USA)
2. Flexus Inc., Sunnyvale, California 94089 (USA)

Thermal expansion coefficients and biaxial elastic moduli of the sputtered W, WN{sub {ital x}}, WSi{sub 0.45}, and WSi{sub 0.67}N{sub 0.10} thin films, used as refractory gate in the self-aligned metal-semiconductor field effect transistors on GaAs, were determined by {ital insitu} stress measurements during heating and cooling of the films on GaAs and Si substrates in the temperature range of 20--450 {degree}C. For the WN{sub {ital x}} films the average values of thermal expansion coefficients increased with the nitrogen content, and varied from 4.5{times}10{sup {minus}6} {degree}C{sup {minus}1} for tungsten to 5.80{times}10{sup {minus}6} {degree}C{sup {minus}1} for WN{sub 0.43}. For the WSi{sub 0.45} and WSi{sub 0.67}N{sub 0.10} films, the measured values of coefficients of thermal expansion (6.55{times}10{sup {minus}6} and 6.37{times}10{sup {minus}6} {degree}C{sup {minus}1}, respectively) were close to that of GaAs (6.40{times}10{sup {minus}6} {degree}C{sup {minus}1}, respectively). Thus by using these films as refractory gates, the stress-induced interdiffusion and interaction at the interface with GaAs can be substantially reduced.

• OSTI ID: 6989865
• Journal Information: Journal of Applied Physics; (USA), Vol. 67:2; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
TUNGSTEN
THERMAL EXPANSION
TUNGSTEN NITRIDES
TUNGSTEN SILICIDES
GALLIUM ARSENIDES
HIGH TEMPERATURE
MEDIUM TEMPERATURE
SILICON
SPUTTERING
SUBSTRATES
THIN FILMS
ARSENIC COMPOUNDS
ARSENIDES
ELEMENTS
EXPANSION
FILMS
GALLIUM COMPOUNDS
METALS
NITRIDES
NITROGEN COMPOUNDS
PNICTIDES
REFRACTORY METAL COMPOUNDS
SEMIMETALS
SILICIDES
SILICON COMPOUNDS
TRANSITION ELEMENT COMPOUNDS
TRANSITION ELEMENTS
TUNGSTEN COMPOUNDS
360104* - Metals & Alloys- Physical Properties
360204 - Ceramics
Cermets
& Refractories- Physical Properties