X-ray study of strains and dislocation density in epitaxial Cu/Ni/Cu/Si(001) films

Journal Article · Mon Nov 01 04:00:00 EST 1999 · Physical Review, B: Condensed Matter

DOI:https://doi.org/10.1103/PhysRevB.60.13780· OSTI ID:698846

Ha, K; Ciria, M; OHandley, R C ^[1]; Stephens, P W; Pagola, S ^[2]

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1. Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)
2. Department of Physics and Astronomy, State University of New York, Stony Brook, New York 11794-3800 (United States)

The strain state of epitaxial Cu(50&hthinsp;{Angstrom})/Ni(t{sub Ni})/Cu(2000&hthinsp;{Angstrom})/Si(001) films as a function of the nickel film thickness (30&hthinsp;{Angstrom}{le}t{sub Ni}{le}2000&hthinsp;{Angstrom}) has been studied using Bragg diffraction and grazing-incidence diffraction with a synchrotron x-ray source. For 30&hthinsp;{Angstrom}{le}t{sub Ni}{le}150&hthinsp;{Angstrom} both the in-plane and out-of-plane nickel strains show a phenomenological (1/t){sup 2/3} power dependence, which is significantly different from the 1/t law commonly accepted in the literature. The Matthews{close_quote} theory, including the effect of the copper capping layer, is used to account for the equilibrium strains of the nickel layer. The 500 and 2000 {Angstrom} films show larger strains than that predicted by the theory, consistent with other studies. The ratio of the nickel in-plane to out-of-plane strains is {minus}1.18{plus_minus}0.05, very close to the expected nickel bulk value of {minus}2c{sub 12}/c{sub 11}={minus}1.28. {copyright} {ital 1999} {ital The American Physical Society}

• OSTI ID: 698846
• Journal Information: Physical Review, B: Condensed Matter, Journal Name: Physical Review, B: Condensed Matter Journal Issue: 19 Vol. 60; ISSN PRBMDO; ISSN 0163-1829
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
66 PHYSICS
COPPER
DISLOCATIONS
NICKEL
SILICON
STRAINS
SYNCHROTRON RADIATION
THIN FILMS
X-RAY DIFFRACTION