Large strains in the epitaxy of Cu on Pt l brace 001 r brace

Journal Article · Tue Oct 15 04:00:00 EDT 1991 · Physical Review, B: Condensed Matter; (United States)

DOI:https://doi.org/10.1103/PhysRevB.44.8261· OSTI ID:5021100

Li, Y S; Quinn, J; Li, H; Tian, D; Jona, F ^[1]; Marcus, P M ^[2]

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1. College of Engineering and Applied Science, State University of New York, Stony Brook, New York (USA)
2. IBM Research Center, P. O. Box 218, Yorktown Heights, New York (USA)

Epitaxial pseudomorphic films of Cu have been grown on Pt{l brace}001{r brace} to thicknesses of 15--17 layers. A quantitative low-energy electron-diffraction intensity analysis of a ten-layer film reveals that the in-plane lattice constant is that of the Pt{l brace}001{r brace}1{times}1 net ({ital a}{sub 0}=3.93 A), and that the bulk interlayer spacing is 1.62{plus minus}0.04 A. Strain analysis shows that this structure is derived from the fcc structure of Cu with a plane strain of about 9%, similar to Cu films grown on Pd{l brace}001{r brace}.

• DOE Contract Number: FG02-86ER45239
• OSTI ID: 5021100
• Journal Information: Physical Review, B: Condensed Matter; (United States), Journal Name: Physical Review, B: Condensed Matter; (United States) Vol. 44:15; ISSN PRBMD; ISSN 0163-1829
• Country of Publication: United States
• Language: English

Related Subjects

656002* -- Condensed Matter Physics-- General Techniques in Condensed Matter-- (1987-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
COHERENT SCATTERING
COPPER
DIFFRACTION
ELECTRON DIFFRACTION
ELEMENTS
FILMS
GROWTH
LATTICE PARAMETERS
METALS
SCATTERING
STRAINS
THIN FILMS
TRANSITION ELEMENTS