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Low-temperature diamond growth in a microwave discharge

Journal Article · · Applied Physics Letters; (USA)
DOI:https://doi.org/10.1063/1.101939· OSTI ID:6986118
; ; ;  [1]; ;  [2]
  1. Sandia National Laboratories, Livermore, California 94551-0969 (USA)
  2. Lockheed Research Center, Org. 93-10, Palo Alto, California 94304 (USA)
A new regime for plasma-assisted chemical vapor deposition (CVD) of diamond is reported in which high quality diamond films can be deposited on silicon with relatively high ratios of methane in hydrogen mixtures and at significantly lower substrate temperatures than previously reported. The deposition was achieved in a microwave plasma discharge with a feed gas consisting of a mixture of only methane and hydrogen. The surface temperature of a molybdenum sample, when exposed to the same plasma environment, was measured at 500 {degree}C with an infrared scanning camera. This substrate temperature is substantially lower than the 700--1000 {degree}C range generally regarded as the optimal regime for CVD diamond growth. Analysis by Raman spectroscopy showed that films deposited with a 2% methane in hydrogen mixture produced a near graphite-free diamond film at our reported low-temperature regime, while deposition at 1000 {degree}C resulted in films with a much higher graphitic content.
OSTI ID:
6986118
Journal Information:
Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 55:26; ISSN APPLA; ISSN 0003-6951
Country of Publication:
United States
Language:
English