High-rate deposition of diamond films in CH{sub 4}/O{sub 2}/H{sub 2} microwave plasmas
Conference
·
OSTI ID:230075
- Auburn Univ., AL (United States)
We report diamond films deposited at high rates by microwave plasma enhanced chemical vapor deposition. Diamond films have been deposited on Mo substrates in the temperature range of 900-1620{degrees}C in 16% (in vol.) methane diluted by hydrogen at pressures around 130 Torr. Oxygen concentration of 1.6 or 3.2% was added. Raman spectra of the deposited films were taken for comparison. The properties of CVD diamond and the effects of substrate preparation, process start-up conditions, and deposition temperature on the growth rate of diamond films are discussed.
- OSTI ID:
- 230075
- Report Number(s):
- CONF-950840--
- Country of Publication:
- United States
- Language:
- English
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