Miniaturized vortex transitional Josephson memory cell by a vertically integrated device structure

Journal Article · Mon Feb 28 23:00:00 EST 1994 · IEEE Transactions on Applied Superconductivity (Institute of Electrical and Electronics Engineers); (United States)

DOI:https://doi.org/10.1109/77.273060· OSTI ID:6982494

Nagasawa, Shuichi; Tahara, Shuichi; Numata, Hideaki; Tsuchida, Sanae ^[1]

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1. NEC Corp., Tsukuba (Japan)

We have developed the smallest Josephson nondestructive read-out (NDRO) memory cell, called a vortex transitional (VT) memory cell, for a Josephson high-speed 16-Kbit RAM. Its size is 22 x 22 microns(sup 2), which is only 16% of the size of previously developed VT memory cells used in Josephson 4-Kbit RAM. This is achieved by developing a vertically integrated device structure and refining small-junction technology. The cell consists of Nb/AlO(sub x)/Nb junctions, three Nb wirings, SiO2 insulators and Mo resistors. The VT memory cells operate properly, with a large operating margin of +/- 20%. 13 refs.

• OSTI ID: 6982494
• Journal Information: IEEE Transactions on Applied Superconductivity (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Transactions on Applied Superconductivity (Institute of Electrical and Electronics Engineers); (United States) Vol. 4:1; ISSN 1051-8223; ISSN ITASE9
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426000* -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
99 GENERAL AND MISCELLANEOUS
990200 -- Mathematics & Computers
JOSEPHSON JUNCTIONS
JUNCTIONS
MEMORY DEVICES
MINIATURIZATION
NIOBIUM COMPOUNDS
REFRACTORY METAL COMPOUNDS
SUPERCONDUCTING DEVICES
SUPERCONDUCTING JUNCTIONS
TRANSITION ELEMENT COMPOUNDS