Epitaxial growth of ZrN on Si(100)

Journal Article · Mon Aug 01 04:00:00 EDT 1988 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.99891· OSTI ID:6976779

Barnett, S A; Hultman, L; Sundgren, J; Ronin, F; Rohde, S

Epitaxial ZrN/sub x/ (x = 1.0 +- 0.05) films have been grown on Si(100) substrates using reactive magnetron sputtering. The films were deposited from a Zr sputtering target in a pure N/sub 2/ discharge with a growth rate of 700 nm/h and substrate temperatures T/sub s/ = 750 and 900 /sup 0/C. X-ray diffractometer results showed complete (100) preferred orientation for both temperatures. Transmission electron microscopy (TEM) observations for samples grown at T/sub s/ = 750 /sup 0/C indicated that the (100) grains were almost randomly oriented about the surface normal, but that a small fraction of epitaxial grains were present. Electron channeling and TEM showed that ZrN films were epitaxial for T/sub s/ = 900 /sup 0/C. The epitaxial relationships were found to be ZrN(100)//Si(100) and ZrN(011)//Si(011). The resistivity of the films was 25--35 ..mu cap omega.. cm.

• Research Organization: Thin Film Group, Department of Physics, Linkoeping University, S-581 83 Linkoeping, Sweden
• OSTI ID: 6976779
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 53:5; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360201* -- Ceramics
Cermets
& Refractories-- Preparation & Fabrication
CHANNELING
COHERENT SCATTERING
CRYSTAL STRUCTURE
DIFFRACTION
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTRON CHANNELING
ELECTRON MICROSCOPY
ELEMENTS
EPITAXY
FILMS
GRAIN BOUNDARIES
MICROSCOPY
MICROSTRUCTURE
NITRIDES
NITROGEN COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
SCATTERING
SEMIMETALS
SILICON
SPUTTERING
THIN FILMS
TRANSITION ELEMENT COMPOUNDS
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION
ZIRCONIUM COMPOUNDS
ZIRCONIUM NITRIDES