Growth of epitaxial TiN thin films on Si(100) by reactive magnetron sputtering

Conference · · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)

OSTI ID:6108277

Choi, C H; Hultman, L; Chiou, W A; Barnett, S A ^[1]

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1. Northwestern Univ., Evanston, IL (United States)

Growth temperature was found to play a crucial role in determining the structure of stoichiometric TiN films deposited on Si(100) by reactive magnetron sputtering. X-ray diffraction, transmission electron microscopy (TEM), and reflection high-energy electron diffraction were used to show that films deposited at substrate temperatures T{sub s} ranging from 700 to 1100C were polycrystalline, with either (100) preferred orientation or mixed (100) and (111) orientations. Films deposited using a two-temperature technique were epitaxial with the relationships TiN(100)//Si(100) and TiN(011) but with considerable misorientation. The most highly oriented films were obtained when 45 nm was first deposited at T{sub s} = 750C, followed by 250 nm at 1,000C. High-resolution cross-sectional TEM studies showed that increasing the nucleation temperature above 750C led to random orientation of TiN lattice fringes relative to the Si lattice. This was explained by the small energy difference between oriented and misoriented TiN nuclei due to the large lattice mismatch (22%).

• OSTI ID: 6108277
• Report Number(s): CONF-9009402--
• Conference Information: Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States) Journal Volume: 9:2
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
360602 -- Other Materials-- Structure & Phase Studies
COATINGS
COHERENT SCATTERING
CRYSTAL STRUCTURE
DEPOSITION
DEVELOPED COUNTRIES
DIFFRACTION
ELECTRON DIFFRACTION
ELECTRON MICROSCOPY
ELECTRON TUBES
ELECTRONIC EQUIPMENT
ELEMENTS
EQUIPMENT
FEDERAL REGION V
FILMS
ILLINOIS
MAGNETRONS
MICROSCOPY
MICROWAVE EQUIPMENT
MICROWAVE TUBES
NITRIDES
NITROGEN COMPOUNDS
NORTH AMERICA
PNICTIDES
SCATTERING
SEMIMETALS
SILICON
SPUTTERING
THIN FILMS
TITANIUM COMPOUNDS
TITANIUM NITRIDES
TRANSITION ELEMENT COMPOUNDS
TRANSMISSION ELECTRON MICROSCOPY
USA
VAPOR DEPOSITED COATINGS
X-RAY DIFFRACTION