Electron cyclotron resonance plasma deposition technique employing magnetron mode sputtering

Journal Article · Fri Jul 01 00:00:00 EDT 1988 · J. Vac. Sci. Technol., A; (United States)

DOI:https://doi.org/10.1116/1.575588· OSTI ID:6976737

Takahashi, C; Kiuchi, M; Ono, T; Matsuo, S

Magnetron mode sputtering was applied to an electron cyclotron resonance (ECR) plasma deposition technique as a material supply at low gas pressures of 10/sup -2/ Pa. Fully reacted metallic-compound films were deposited at low temperatures with much higher rates than those obtained in conventional reactive sputtering: 800 A/min for Al/sub 2/O/sub 3/ film and 1000 A/min for Ta/sub 2/O/sub 5/ film with uniformity of +- 5% within an area of 10 cm in diameter. These results were used to develop an automated system. The superior deposition characteristics are due to the high-rate sputtering of the metallic target surface in reactive gas, and to the features of the film formation reaction enhanced in the ECR plasma deposition technique.

• Research Organization: NTT LSI Laboratories, 3-1, Morinosato Wakamiya, Atsugi, Kanagawa, 243-01 Japan
• OSTI ID: 6976737
• Journal Information: J. Vac. Sci. Technol., A; (United States), Vol. 6:4
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM OXIDES
SPUTTERING
SURFACE COATING
TANTALUM OXIDES
THIN FILMS
DEPOSITION
ELECTRON CYCLOTRON-RESONANCE
LOW PRESSURE
MAGNETRONS
PLASMA
VAPOR DEPOSITED COATINGS
ALUMINIUM COMPOUNDS
CHALCOGENIDES
COATINGS
CYCLOTRON RESONANCE
ELECTRON TUBES
ELECTRONIC EQUIPMENT
EQUIPMENT
FILMS
MICROWAVE EQUIPMENT
MICROWAVE TUBES
OXIDES
OXYGEN COMPOUNDS
REFRACTORY METAL COMPOUNDS
RESONANCE
TANTALUM COMPOUNDS
TRANSITION ELEMENT COMPOUNDS
360201* - Ceramics
Cermets
& Refractories- Preparation & Fabrication