Growth of (111) GaAs on (111) Si using molecular-beam epitaxy

Journal Article · Mon Aug 01 04:00:00 EDT 1988 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.341796· OSTI ID:6976268

Radhakrishnan, G; Liu, J; Grunthaner, F; Katz, J; Morkoc, H; Mazur, J

(111) GaAs layers have been grown epitaxially on (111) Si wafers, both on-axis as well as 3/sup 0/ off-axis towards the 11-bar0 direction, using molecular-beam epitaxy. The grown layers have been characterized by scanning electron microscopy, x-ray diffraction, and transmission electron microscopy.

• Research Organization: Jet Propulsion Laboratory, California Institute of Technology 4800 Oak Grove Dr., Pasadena, California 91109
• OSTI ID: 6976268
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 64:3; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure & Phase Studies
ARSENIC COMPOUNDS
ARSENIDES
COHERENT SCATTERING
CRYSTAL GROWTH METHODS
CRYSTAL STRUCTURE
DIFFRACTION
ELECTRON MICROSCOPY
ELEMENTS
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LAYERS
MATERIALS
MICROSCOPY
MOLECULAR BEAM EPITAXY
PNICTIDES
SCANNING ELECTRON MICROSCOPY
SCATTERING
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICON
SUBSTRATES
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION