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Radiation effects on A1GaAs/GaAs solar cells using 0. 9-3. 0 MeV protons and 1. 0-1. 4 MeV electrons. Technical report 1 Jan--31 Dec 76

Technical Report ·
OSTI ID:6972584

Aluminum gallium arsenide solar cells were irradiated with 1.0 and 1.4 MeV electrons, and with 0.9 and 3.0 MeV protons to determine radiation sensitivity. Electron fluences ranged from 1 x 10 to the 14th power to 3 x 10 to the 16 power electrons, 1 sq cm, and proton fluences from 5 x 10 to the 10 power to 2.7 x 10 to the 12th power/sqcm. A solar simulator and a tungsten lamp were used to evaluate changes in the current-voltage characteristics curves. In most cases, AlGaAs solar cells showed a greater resistance to radiation than silicon cells.

Research Organization:
Rome Air Development Center, Griffiss AFB, N.Y. (USA)
OSTI ID:
6972584
Report Number(s):
AD-A-048037; RADC-TR-77-332
Country of Publication:
United States
Language:
English